GB/T 16468-1996 靜電感應晶體管系列型譜

本標準規定了靜電感應晶體管的標準系列和品種，以及選擇和應用導則。 本標準適用于電子設備在設計和制造時應優先選用的靜電感應晶體管的標準系列和品種，同時也作為靜電感應晶體管生產、研制、開發時選擇系列和品種的基本依據。

Series programmes for static induction transistors

GB/T 15449-1995 管殼額定開關用場效應晶體管 空白詳細規范

本空白詳細規范規定了制訂管殼額定開頭用場效應晶體詳細規范的基本原則，制訂該范圍內的所有詳細規范應與本空白詳細規范一致。

Biank detail-specification for field-dffect transistors for case-rated swatching application

GB/T 15450-1995 硅雙柵場效應晶體管 空白詳細規范

本空白詳細規范規定了制訂硅雙柵場效應晶體管詳細規范的基本原則，制訂該范圍內的所有詳細規范應與本空白詳細規范一致。

Blank detail specification for silicon dual-qute field-effect transistors

SJ/T 9014.8.2-2018 半導體器件 分立器件第8-2部分：超結金屬氧化物半導體場效應晶體管空白詳細規范

Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

IEC 60747-8:2010 半導體器件.分立器件.第8部分:場效應晶體管

This part of IEC 60747 gives standards for the following categories of field-effect transistors: – type A: junction-gate type; – type B: insulated-gate depletion (normally on) type; – type C: insulated-gate enhancement (normally off) type. Since a field-effect transistor may have one or several gates, the classification shown below results: NOTE 1 Schottky barrier-gate and insulated gate devices include depletion type devices and enhancement type devices. NOTE 2 MOSFETs for some applications may not have inverse diode characteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling diode. NOTE 3 The graphical symbol only for type C is used in this standard. The standard equally applies for P-channel and for type A and B devices.

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

IEC 60747-8-4:2004 半導體分立器件.第8-4部分:電力開關裝置用金屬氧化物半導體場效應晶體管(MOSFETs)

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.

Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

BS IEC 60747-8:2001 分立半導體器件和集成電路.場效應晶體管.電源轉換場效應晶體管測量方法中附加功率、特性和amds

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

IEC 60747-8:2000 半導體裝置.第8部分:場效應晶體管

This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion type; - type C: insulated-gate enhancement type.

Semiconductor devices - Part 8: Field-effect transistors

SJ 20789-2000 MOS場效應晶體管熱敏參數快速篩選試驗方法

本規范規定了MOS場效應晶體管熱敏參數快速篩選的試驗方法。 本規范適用于MOS場效應晶體管熱敏參數快速篩選。

Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

SJ 50033/120-1997 半導體分立器件 CS205型砷化鎵微波功率場效應晶體管詳細規范

Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor

SJ 50033/119-1997 半導體分立器件 CS204型砷化鎵微波功率場效應晶體管詳細規范

Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor

SJ 50033/121-1997 半導體分立器件.CS3458～CS3460型硅N溝道結型場效應晶體管詳細規范

Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors

SJ 50033/122-1997 半導體分立器件.CS3684～CS3687型硅N溝道結型場效應晶體管詳細規范

Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors

BS QC 750114:1996 電子元件質量評估協調制度 半導體器件 離散設備 場效應晶體管 用于開關應用的外殼額定場效應晶體管的空白詳細規范

To be read in conjunction with BS QC 700000:1991, BS QC 750100:1986

Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications

SJ 50033/106-1996 半導體分立器件.CS203型砷化鎵微波低噪聲場效應晶體管詳細規范

semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor

SJ 50033/84-1995 半導體分立器件.CS140型硅N溝道MOS耗盡型場效應晶體管.詳細規范

Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor

SJ 50033/85-1995 半導體分立器件.CS141型硅N溝道MOS耗盡型場效應晶體管詳細規范

Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor

SJ 50033/87-1995 半導體分立器件.CS4091～CS4093型硅N溝道耗盡型場效應晶體管詳細規范

Semiconductor discrete device.Detail specification for type CS4091～CS4093 silicon N-channel deplition mode field-effect transistor

SJ 50033/86-1995 半導體分立器件.CS5114～CS5116型硅P溝道耗盡型場效應晶體管詳細規范

Semiconductor discrete device.Detail specification for type CS5114～CS5116 silicon P-channel deplition mode field-effect transistor

SJ 50033/88-1995 半導體分立器件.CS6760和CS6762型硅N溝道增強型場效應晶體管詳細規范

Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor